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Search for "Kelvin probe microscopy" in Full Text gives 8 result(s) in Beilstein Journal of Nanotechnology.
A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope
Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52
- ]. In addition, density functional theory has been used to model the effect of ion-induced defects on the electronic band structure of various 2D transition metal dichalcogenides [26][30][36], and band-excitation Kelvin probe microscopy has been used to probe the resulting changes in the local work
Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation
Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155
- energetic resolution, Kelvin probe force microscopy (KPFM, also known as scanning Kelvin probe microscopy, SKPM) is the tool of choice for the precise measurement of the WF across oxide heterostructures, which is a technique that has not been fully exploited to date. In recent years, KPFM has proved to be
In situ characterization of nanoscale contaminations adsorbed in air using atomic force microscopy
Beilstein J. Nanotechnol. 2018, 9, 2925–2935, doi:10.3762/bjnano.9.271
- to access the state of contamination of real surfaces under ambient conditions using advanced atomic force microscopy techniques. Keywords: atomic force microscopy; cantilever; contact potential; electrostatic forces; force spectroscopy; Hamaker constant; Kelvin probe microscopy; surface
- where the flat part of the cantilever chip has been analyzed in (true) nc-DAFM using Kelvin probe microscopy (KPM) to measure the contact potential. The three analyzed samples correspond to the surface of platinum-films evaporated onto silicon cantilevers, but with three different state of contamination
- kHz. Further details of how DAFM and Kelvin probe microscopy (KPM) [14] are implemented in our experiments is described elsewhere [42][50][51][52]. WSxM software was used for image processing [56]. Typically, a plane filter was applied to topography images; no filter is applied to the electrostatic
Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
Beilstein J. Nanotechnol. 2018, 9, 1834–1843, doi:10.3762/bjnano.9.175
- probe force microscopy under frequency-modulated excitation over a silicon nanocrystal solar cell, as well as against results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device. Moreover, we show how this simulation routine can complement
- the simulation routine against the results obtained by intensity-modulated scanning Kelvin probe microscopy on a polymer/fullerene bulk heterojunction device as presented by Shao and co-workers [4]. The outcome of these comparisons did not only provide additional evidence supporting results obtained
- results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device as presented by Shao and co-workers [4]. As stated above, SPECTY can be useful in the analysis of results obtained by several frequency-modulated KPFM techniques. Intensity
Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics
Beilstein J. Nanotechnol. 2018, 9, 1802–1808, doi:10.3762/bjnano.9.171
- . To simultaneously map VOC directly, the topography is tracked in the same manner, but a secondary PID loop is also configured to continually adjust the sample bias in order to maintain a photocurrent of zero. This is akin to Kelvin probe microscopy or scanning surface potential microscopy, in which a
Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system
Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90
- of the RA SAM, even at room temperature. Additionally, photo-assisted electrical force microscopy, photo-assisted scanning Kelvin probe microscopy and Raman spectroscopy indicate a RA-induced graphene doping and photo-charge generation. Finally, the optical excitation of the RA monolayer generates
- optical response, interface-induced modulation of the electrical properties of the RA–graphene hybrid system were investigated in a series of photo-assisted electric force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) measurements. Figure 4 shows a scheme of the photo-assisted EFM
- electrostatic force microscopy (EFM) [65][66] and scanning Kelvin probe microscopy (SKPM) [67] experiments were carried out using a white light emitting diode (LED) source. ScanAsyst – Air (bare Si tip), HQ:NSC18/Cr-Au (Au-coated tip) and HQ:CSC37-CrAu (Au-coated tip) cantilevers from Bruker and MikroMasch were
Anchoring of a dye precursor on NiO(001) studied by non-contact atomic force microscopy
Beilstein J. Nanotechnol. 2018, 9, 242–249, doi:10.3762/bjnano.9.26
- that they are lying flat on the surface in a trans-conformation. Within the limits of our Kelvin probe microscopy setup a charge transfer from NiO to the molecular layer of 0.3 electrons per molecules was observed only in the areas where the molecules are closed packed. Keywords: metal oxide; nickel
Electronic and electrochemical doping of graphene by surface adsorbates
Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195
- in this case is the reaction in Equation 1. The water molecules required for the reaction are assumed to be located at the graphene/SiO2 interface. Indeed, the presence of water layers on the surface of SiO2 films grown on Si has been confirmed by Kelvin probe microscopy, X-ray spectroscopy and FTIR
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